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dc.creatorMoreno Rubio, Jorge
dc.creatorAngarita Malaver, Edison
dc.creatorFernández González, Herman
dc.date.accessioned2018-11-22T14:03:25Z
dc.date.available2018-11-22T14:03:25Z
dc.date.issued2015-01-05
dc.identifier.citationMoreno Rubio, J., Angarita Malaver, E., & Fernández González, H. (2015). Amplificador de Potencia Doherty de 25 W, 70% de Eficiencia y Back Off de Salida de 6 dB para Aplicaciones a 2,4 GHz, con Control de VGS, PEAK. INGE CUC, 11(1), 48-52. Recuperado a partir de https://revistascientificas.cuc.edu.co/ingecuc/article/view/384spa
dc.identifier.issn0122-6517, 2382-4700 electrónico
dc.identifier.urihttp://hdl.handle.net/11323/1697
dc.description.abstractThis paper shows the design and simulation results of a hybrid Doherty power amplifier. The amplifier has been designed at 2,4 GHz, obtaining power-added efficiency above 70 % for 6 dB output power back-off, together with a small signal gain of 17 dB. Design and analysis equations are presented considering class AB bias conditions for the main amplifier and class C for the peak one in back-off larger than 6 dB, and FET device assumption. An additional control on the bias point of the peak device has been carried out, in order to increase the gain on the Doherty region and ease the design of the peak branch. A Cree’s GaN-HEMT CGH40010F device has been used with a nonlinear model guarantied up to 6 GHz and with an expected output power of 10 W. The obtained output power is higher than 25-W. The simulation has been carried out using Agilent ADS CAD tools. The present design could present the state of the art in terms of continuous-wave (CW) characterization.eng
dc.description.abstractEste artículo muestra el diseño y los resultados de simulación de un amplificador de potencia Doherty sobre tecnología híbrida. El amplificador fue diseñado a 2,4 GHz, obteniendo una eficiencia de potencia aditiva arriba del 70 % a 6-dB debajo de saturación, junto con una ganancia a pequeña señal de 17 dB. Las ecuaciones de análisis y diseño son presentadas considerando polarización clase AB para el amplificador principal y clase C para el amplificador auxiliar a 6-dB debajo de saturación, y dispositivos FET. Un control adicional sobre el punto de polarización del dispositivo auxiliar se ha llevado a cabo, para incrementar la ganancia en la región Doherty y facilitar el diseño de la rama auxiliar. Un dispositivo GaN-HEMT CGH40010 de Cree ha sido usado con un modelo no-lineal garantizado hasta 6-GHz y con una potencia de salida esperada de 10-W. La potencia de salida obtenida es mayor a 25-W. La simulación ha sido llevada a cabo usando Agilent ADS. El presente diseño representaría el estado del arte en términos de caracterización de onda continua (OC).spa
dc.format.mimetypeapplication/pdf
dc.language.isoengeng
dc.publisherCorporación Universidad de la Costaspa
dc.relation.ispartofseries1
dc.sourceINGE CUCeng
dc.subjectPower Amplifiereng
dc.subjectHigh Efficiencyeng
dc.subjectGaN Deviceseng
dc.subjectDohertyeng
dc.subjectMicrowave Circuitseng
dc.subjectAmplificador de potenciaeng
dc.subjectAlta eficienciaeng
dc.subjectDispositivos GaNeng
dc.subjectCircuitos de microondaseng
dc.titleA 25 W 70% efficiency Doherty power amplifier at 6 dB output back-off for 2.4 GHz applications with VGS, PEAK controleng
dc.title.alternativeAmplificador de potencia Doherty de 25 W, 70% de eficiencia y back off de salida de 6 dB para aplicaciones a 2,4 GHz, con control de VGS, PEAKeng
dc.typeArticleeng
dcterms.references[1] J. Moreno, J. Fang, R. Quaglia, V. Camarchia, M. Pirola, and G. Ghione, “Development of single-stage and doherty GaN-based hybrid RF power amplifiers for quasi-constant envelope and high peak to average power ratio wireless standards,” Microw. Opt. Technol. Lett., vol. 54, no. 1, pp. 206–210, 2012. DOI:10.1002/mop.26459spa
dcterms.references[2] S. Cripps, RF Power Amplifiers for Wireless Communications, 2nd ed. Norwood: Artech House, 2006.
dcterms.references[3] P. Colantonio, F. Giannini, and E. Limiti, High Efficiency RF and Microwave Solid State Power Amplifiers, 1st ed. Gran Bretaña: Wiley, 2009.
dcterms.references[4] K. Bumman, M. Junghwan, and K. Ildu, “Efficiently Amplified,” IEEE Microw. Mag., vol. 11, no. 5, pp. 87–100, 2010. DOI:10.1109/MMM.2010.937099
dcterms.references[5] W. Doherty, “A New High Efficiency Power Amplifier for Modulated Waves,” IEEE RFIC Virtual J., vol. 24, no. 1, pp. 1163–1182, 2006. DOI:10.1109/JRPROC.1936.228468
dcterms.references[6] B. Kim, I. Kim, and J. Moon, “Advanced Doherty Architecture,” IEEE Microw. Mag., vol. 11, no. 5, pp. 72–86, 2010. DOI:10.1109/MMM.2010.937098
dcterms.references[7] J. Shealy, J. Smart, M. Poulton, R. Sadler, D. Grider, S. Gibb, B. Hosse, B. Sousa, D. Halchin, and V. Steel, “Gallium nitride (GaN) HEMT’s: Progress and potential for commercial applications,” in Symposium Gallium Arsenide Integrated Circuit (GaAs IC), 2002, pp. 243–246. DOI:10.1109/gaas.2002.1049069
dcterms.references[8] J. Lu, Y. Wang, L. Ma, and Z. Yu, “A new small-signal modeling and extraction method in AlGaN/GaN HEMTs,” Solid. State. Electron., vol. 52, no. 1, pp. 115–120, 2008. DOI:10.1016/j.sse.2007.07.009
dcterms.references[9] J. Rubio, J. Fang, R. Quaglia, V. Camarchia, M. Pirola, S. Guerrieri, and G. Ghione, “A 22W 65% efficiency GaN Doherty Power Amplifier at 3.5 GHz for WiMAX applications,” in Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), 2011, pp. 1–4. DOI:10.1109/inmmic.2011.5773332
dcterms.references[10] J. Rubio, J. Fang, R. Quaglia, V. Camarchia, M. Pirola, S. Guerrieri, and G. Ghione, “"3-3.6-GHz Wideband GaN Doherty Power Amplifier Exploiting Output Compensation Stages,” IEEE Trans. Microw. Theory Tech., vol. 60, no. 8, pp. 2543–2548, 2012. DOI:10.1109/TMTT.2012.2201745
dcterms.references[11] V. Camarchia, J. Fang, J. Moreno Rubio, M. Pirola, and R. Quaglia, “7 GHz MMIC GaN Doherty Power Amplifier With 47% Efficiency at 7 dB Output Back-Off,” IEEE Microw. Wirel. Components Lett., vol. 23, no. 1, pp. 34–36, 2012. DOI:10.1109/LMWC.2012.2234090
dc.source.urlhttps://revistascientificas.cuc.edu.co/ingecuc/article/view/384
dc.identifier.eissn2382-4700
dc.identifier.pissn0122-6517


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