| dc.creator | Moreno Rubio, Jorge | |
| dc.creator | Angarita Malaver, Edison | |
| dc.creator | Fernández González, Herman | |
| dc.date.accessioned | 2018-11-22T14:03:25Z | |
| dc.date.available | 2018-11-22T14:03:25Z | |
| dc.date.issued | 2015-01-05 | |
| dc.identifier.citation | Moreno Rubio, J., Angarita Malaver, E., & Fernández González, H. (2015). Amplificador de Potencia Doherty de 25 W, 70% de Eficiencia y Back Off de Salida de 6 dB para Aplicaciones a 2,4 GHz, con Control de VGS, PEAK. INGE CUC, 11(1), 48-52. Recuperado a partir de https://revistascientificas.cuc.edu.co/ingecuc/article/view/384 | spa |
| dc.identifier.issn | 2382-4700 | |
| dc.identifier.issn | 0122-6517 | |
| dc.identifier.uri | http://hdl.handle.net/11323/1697 | |
| dc.description.abstract | This paper shows the design and simulation
results of a hybrid Doherty power amplifier. The
amplifier has been designed at 2,4 GHz, obtaining power-added
efficiency above 70 % for 6 dB output power
back-off, together with a small signal gain of 17 dB.
Design and analysis equations are presented considering
class AB bias conditions for the main amplifier
and class C for the peak one in back-off larger than 6
dB, and FET device assumption. An additional control
on the bias point of the peak device has been carried
out, in order to increase the gain on the Doherty region
and ease the design of the peak branch. A Cree’s
GaN-HEMT CGH40010F device has been used with a
nonlinear model guarantied up to 6 GHz and with an
expected output power of 10 W. The obtained output
power is higher than 25-W. The simulation has been
carried out using Agilent ADS CAD tools. The present
design could present the state of the art in terms of
continuous-wave (CW) characterization. | eng |
| dc.description.abstract | Este artículo muestra el diseño y los resultados
de simulación de un amplificador de potencia Doherty
sobre tecnología híbrida. El amplificador fue diseñado a 2,4
GHz, obteniendo una eficiencia de potencia aditiva arriba
del 70 % a 6-dB debajo de saturación, junto con una ganancia
a pequeña señal de 17 dB. Las ecuaciones de análisis
y diseño son presentadas considerando polarización clase
AB para el amplificador principal y clase C para el amplificador
auxiliar a 6-dB debajo de saturación, y dispositivos
FET. Un control adicional sobre el punto de polarización
del dispositivo auxiliar se ha llevado a cabo, para
incrementar la ganancia en la región Doherty y facilitar
el diseño de la rama auxiliar. Un dispositivo GaN-HEMT
CGH40010 de Cree ha sido usado con un modelo no-lineal
garantizado hasta 6-GHz y con una potencia de salida esperada
de 10-W. La potencia de salida obtenida es mayor a
25-W. La simulación ha sido llevada a cabo usando Agilent
ADS. El presente diseño representaría el estado del arte en
términos de caracterización de onda continua (OC). | spa |
| dc.language.iso | eng | eng |
| dc.publisher | Corporación Universidad de la Costa | |
| dc.relation.ispartofseries | 1 | |
| dc.source | INGE CUC | eng |
| dc.subject | Power Amplifier | eng |
| dc.subject | High Efficiency | eng |
| dc.subject | GaN Devices | eng |
| dc.subject | Doherty | eng |
| dc.subject | Microwave Circuits | eng |
| dc.subject | Amplificador de potencia | eng |
| dc.subject | Alta eficiencia | eng |
| dc.subject | Dispositivos GaN | eng |
| dc.subject | Circuitos de microondas | eng |
| dc.title | A 25 W 70% efficiency Doherty power amplifier at 6 dB output back-off for 2.4 GHz applications with VGS, PEAK control | eng |
| dc.title.alternative | Amplificador de potencia Doherty de 25 W, 70% de eficiencia y back off de salida de 6 dB para aplicaciones a 2,4 GHz, con control de VGS, PEAK | eng |
| dc.type | Article | eng |
| dcterms.references | [1] J. Moreno, J. Fang, R. Quaglia, V. Camarchia, M. Pirola, and G. Ghione, “Development of single-stage and doherty GaN-based hybrid RF power amplifiers for quasi-constant envelope and high peak to average power ratio wireless standards,” Microw. Opt. Technol. Lett., vol. 54, no. 1, pp. 206–210, 2012. DOI:10.1002/mop.26459 | spa |
| dcterms.references | [2] S. Cripps, RF Power Amplifiers for Wireless Communications, 2nd ed. Norwood: Artech House, 2006. | |
| dcterms.references | [3] P. Colantonio, F. Giannini, and E. Limiti, High Efficiency RF and Microwave Solid State Power Amplifiers, 1st ed. Gran Bretaña: Wiley, 2009. | |
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| dcterms.references | [6] B. Kim, I. Kim, and J. Moon, “Advanced Doherty Architecture,” IEEE Microw. Mag., vol. 11, no. 5, pp. 72–86, 2010. DOI:10.1109/MMM.2010.937098 | |
| dcterms.references | [7] J. Shealy, J. Smart, M. Poulton, R. Sadler, D. Grider, S. Gibb, B. Hosse, B. Sousa, D. Halchin, and V. Steel, “Gallium nitride (GaN) HEMT’s: Progress and potential for commercial applications,” in Symposium Gallium Arsenide Integrated Circuit (GaAs IC), 2002, pp. 243–246. DOI:10.1109/gaas.2002.1049069 | |
| dcterms.references | [8] J. Lu, Y. Wang, L. Ma, and Z. Yu, “A new small-signal modeling and extraction method in AlGaN/GaN HEMTs,” Solid. State. Electron., vol. 52, no. 1, pp. 115–120, 2008. DOI:10.1016/j.sse.2007.07.009 | |
| dcterms.references | [9] J. Rubio, J. Fang, R. Quaglia, V. Camarchia, M. Pirola, S. Guerrieri, and G. Ghione, “A 22W 65% efficiency GaN Doherty Power Amplifier at 3.5 GHz for WiMAX applications,” in Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), 2011, pp. 1–4. DOI:10.1109/inmmic.2011.5773332 | |
| dcterms.references | [10] J. Rubio, J. Fang, R. Quaglia, V. Camarchia, M. Pirola, S. Guerrieri, and G. Ghione, “"3-3.6-GHz Wideband GaN Doherty Power Amplifier Exploiting Output Compensation Stages,” IEEE Trans. Microw. Theory Tech., vol. 60, no. 8, pp. 2543–2548, 2012. DOI:10.1109/TMTT.2012.2201745 | |
| dcterms.references | [11] V. Camarchia, J. Fang, J. Moreno Rubio, M. Pirola, and R. Quaglia, “7 GHz MMIC GaN Doherty Power Amplifier With 47% Efficiency at 7 dB Output Back-Off,” IEEE Microw. Wirel. Components Lett., vol. 23, no. 1, pp. 34–36, 2012. DOI:10.1109/LMWC.2012.2234090 | |
| dc.identifier.url | https://revistascientificas.cuc.edu.co/ingecuc/article/view/384 | |
