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dc.creatorGonzález-Ariza, R.
dc.creatorMartínez-Castro, O.
dc.creatorMoreno-Armenta, María G.
dc.creatorGonzalez-Garcia, A.
dc.creatorLopez-Perez, W.
dc.creatorGonzalez-Hernandez, R.
dc.date.accessioned2019-07-11T15:48:49Z
dc.date.available2019-07-11T15:48:49Z
dc.date.issued2019-09-15
dc.identifier.urihttp://hdl.handle.net/11323/4941
dc.description.abstractWe have theoretically studied the structural, electronic and magnetic properties of the hydrogen adsorption on a honeycomb gallium-nitride two-dimensional monolayer (2D g-GaN). Results indicate that the band gap energy can be systematically tuned by the hydrogen coverage on the 2D g-GaN in the diluted limit. In addition, a total magnetic moment can be induced in the 2D g-GaN by hydrogen adsorption due to s-p interaction and band structure effects. Although hydrogen adsorption on top of nitrogen atoms shows the most stable energy in the 2D g-GaN, the most stable ferromagnetism -with a nonzero magnetic moment-is obtained when hydrogen is adsorbed on top of Ga atoms. These results indicate that H adatoms on the 2D g-GaN systems could be a potential candidate for future spintronic applications.spa
dc.language.isoengspa
dc.publisherUniversidad de la Costaspa
dc.relation.ispartofhttps://doi.org/10.1016/j.physb.2019.05.041spa
dc.rightsCC0 1.0 Universal*
dc.rights.urihttp://creativecommons.org/publicdomain/zero/1.0/*
dc.titleTuning the electronic and magnetic properties of 2D g-GaN by H adsorption: An ab-initio studyspa
dc.typeArticlespa
dc.type.hasVersioninfo:eu-repo/semantics/draftspa
dc.rights.accessrightsinfo:eu-repo/semantics/openAccessspa


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CC0 1.0 Universal
Except where otherwise noted, this item's license is described as CC0 1.0 Universal